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| HITFET(R) BSP 75 Smart Lowside Power Switch Features * Logic Level Input * Input protection (ESD) * Thermal shutdown (with restart) * Overload protection * Short circuit protection * Overvoltage protection * Current limitation Product Summary Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy VDS RDS(ON) ID(lim) ID(Nom) EAS 55 550 1 0.7 550 V m A A mJ Application * All kinds of resistive, inductive and capacitive loads in switching applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. V bb + LOAD M Drain 2 Overvoltage protection 1 IN dv/dt limitation Short circuit protection Short circuit Current protection limitation Source ESD Overtemperature protection 3 4 (R) HITFET Pin 1 2 3 TAB Symbol IN DRAIN SOURCE SUBSTRATE Function Input Output to the load Ground Must be connected to Pin 3 Semiconductor Group Page 1 of 9 1998-02-04 HITFET(R) BSP 75 Maximum Ratings at Tj=25C unless otherwise specified Parameter Continuous drain source voltage (overvoltage protection see page 4) Drain source voltage for short circuit protection Load dump protection VLoadDump=UP+US; UP=13.5 V RI1)=2 ; td=400ms; IN=low or high (8V) RL=50 RI=2 ; td=400ms; IN=high (8V) RL=22 Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation (DC) Unclamped single pulse inductive energy ID(ISO) = 0.7 A Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance junction soldering point: junction - ambient 3): Symbol VDS Values 55 32 Unit V V V 80 47 -0.2 ... +10 -0.2 ... +20 -40 ...+150 -55 ...+150 1.8 550 4000 VDS VLoadDump2) VIN VIN Tj Tstg Ptot EAS VESD V V C W mJ V E 40/150/56 RthJS RthJA 10 70 K/W 1) 2) RI=internal resistance of the load dump test pulse generator LD200 VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 3) Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection Semiconductor Group Page 2 1998-02-04 HITFET(R) BSP 75 Electrical Characteristics Parameter and Conditions at Tj = 25 C, unless otherwise specified Symbol Values min typ max Unit Static Characteristics Drain source clamp voltage ID = 10 mA Tj =-40...+150C: Off state drain current VIN = 0 V, VDS = 32 V Tj =-40...+150C: Input threshold voltage ID = 10 mA Input current normal operation, ID 55 -2 --1000 ----0.7 --2.5 100 200 1500 550 850 475 750 -- 70 5 3 200 300 2000 675 1350 550 1000 -- V A V A m RDS(on) ID(Nom) m A ID(lim) 1 1.5 1.9 A ton toff -dVDS/dt on dVDS/dt off ----- 10 10 4 4 20 20 10 10 s s V/s V/s Semiconductor Group Page 3 1998-02-04 HITFET(R) BSP 75 Parameter and Conditions at Tj = 25 C, unless otherwise specified Symbol Values min typ max Unit Protection Functions Thermal overload trip temperature Tjt Thermal hysteresis Tjt Unclamped single pulse inductive energy ID(ISO)=0.7 A, Vbb=32 V Tj=25 C EAS Tj=150 C Inverse Diode Continuous source drain voltage VIN = 0 V, -ID = 2*0.7 A 150 -550 200 165 10 --- ----- C K mJ VSD -- 1 -- V Circuit Description The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection functions * Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about 63 V) when inductive loads are switched off. * Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the overtemperature threshold is reached. * Overtemperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Overtemperature shutdown occurs at minimum 150 C. A hysteresis of typ. 10 K enables an automatical restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings). Semiconductor Group Page 4 1998-02-04 HITFET(R) BSP 75 Block diagram Terms V Z Inductive and overvoltage output clamp D RL S I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb HITFET VIN Input circuit (ESD protection) IN VDS ESD-ZD I VDS(AZ) VBB Source t ESD zener diodes are not designed for DC current. Turn on into overload or short circuit VIN ID ID(lim) t Shut down by overtemperature and restart by cooling. Current internally limited at I D(lim). Semiconductor Group Page 5 1998-02-04 HITFET(R) BSP 75 Maximum allowable power dissipation Ptot = f (TC) Ptot [W] 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 10 0 125 150 On-state resistance RON = f (Tj); ID= 0.7 A; VIN= 10 V RON [m] 1 000 900 800 700 600 500 400 300 200 100 0 -50 -2 5 0 25 50 75 100 125 150 typ . m a x. TC [C] On-state resistance RON = f (Tj); ID= 0.7 A; VIN= 5 V RON [m] 1 400 Tj [C] Typ. input threshold voltage VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V VIN(th) [V] 3 1 200 2.5 1 000 2 800 m a x. 1.5 600 typ . 400 0.5 1 200 0 -50 -2 5 0 25 50 75 100 125 150 0 -50 -25 0 25 50 75 1 00 12 5 150 Tj [C] Tj [C] Semiconductor Group Page 6 1998-02-04 HITFET(R) BSP 75 Typ. on-state resistance RON = f (VIN) ID= 0.7 A; Tj= 25C RON [m] 2 000 Typ. current limitation ID(lim) = f (Tj); VDS=12V, VIN= 10V ID(lim) [A] 1.5 1.4 1 500 1.3 1 000 1.2 500 1.1 0 0 2 4 6 8 10 1 -50 -25 0 25 50 75 1 00 12 5 150 VIN [V] Typ. short circuit current ID(SC) = f (VIN); VDS=12V, Tj= 25C ID(SC) [A] 1.6 1.4 1.2 1 0.01 Tj [C] Transient thermal impendance ZthJC = f (tp) Parameter: D=tp/T ZthJC [K/W] 1 E+ 2 D= 0.5 0.2 1 E+ 1 0.1 0.05 0.8 0.6 1 E+ 0 0.02 0.005 P tot tp T t 0.4 0.2 1E-1 0 0 0 2 4 6 8 10 1E-2 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 VIN [V] tp [s] Semiconductor Group Page 7 1998-02-04 HITFET(R) BSP 75 Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S Vbb C VIN HITFET V VIN thermal shutdown Semiconductor Group Page 8 1998-02-04 HITFET(R) BSP 75 Package and ordering code all dimensions in mm SOT223/4 BSP75 Ordering code Q67060-S7200-A2 Definition of soldering point with temperature Ts: upper side of solder edge of device pin 4. Pin 4 Semiconductor Group Page 9 1998-02-04 |
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